2SK3798 2004-12-07 1 toshiba field effect transistor silicon n channel mos type ( -mosiv) 2SK3798 switching regulator applications ? low drain-source on resistance: r ds (on) = 2.5 (typ.) ? high forward transfer admittance: |y fs | = 2.8 s (typ.) ? low leakage current: i dss = 100 a (v ds = 720 v) ? enhancement-mode: v th = 2.0~4.0 v (v ds = 10 v, i d = 1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 900 v drain-gate voltage (r gs = 20 k ? ) v dgr 900 v gate-source voltage v gss 30 v dc (note 1) i d 4 drain current pulse (t = 1 ms) (note 1) i dp 12 a drain power dissipation (tc = 25c) p d 40 w single pulse avalanche energy (note 2) e as 345 mj avalanche current i ar 4 a repetitive avalanche energy (note 3) e ar 4.0 mj channel temperature t ch 150 c storage temperature range t stg -55~150 c thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 3.125 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: please use devices on conditions that the channel temperature is below 150c. note 2: v dd = 90 v, t ch = 25c, l = 39.6 mh, i ar = 4.0 a, r g = 25 ? note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensitive device. please handle with caution. unit: mm 1: gate 2: drain 3: source jedec D jeita sc-67 toshiba 2-10u1b weight : 1.7 g (typ.) 1 3 2
2SK3798 2004-12-07 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 30 v, v ds = 0 v ? ? 10 a gate-source breakdown voltage v (br) gss i g = 10 a, v ds = 0 v 30 ? ? v drain cut-off current i dss v ds = 720 v, v gs = 0 v ? ? 100 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 900 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 2 a ? 2.5 3.5 ? forward transfer admittance ? y fs ? v ds = 20 v, i d = 2 a 1.4 2.8 ? s input capacitance c iss ? 800 ? reverse transfer capacitance c rss ? 20 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 85 ? pf rise time t r ? 20 ? turn-on time t on ? 65 ? fall time t f ? 45 ? switching time turn-off time t off ? 165 ? ns total gate charge q g ? 26 ? gate-source charge q gs ? 14 ? gate-drain charge q gd v dd ? = 10 v, i d = 4 a ? 12 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 4 a pulse drain reverse current (note 1) i drp ? ? ? 12 a forward voltage (diode) v dsf i dr = 4 a, v gs = 0 v ? ? ? 1.7 v reverse recovery time t rr ? 1100 ? ns reverse recovery charge q rr i dr = 4 a, v gs = 0 v, di dr /dt = 100 a/ s ? 8.3 ? c marking r l = 100 ? 0 v 10 v v gs v dd ? = 2 a v out 50 ? duty < = = 10 s lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. k3798 part no. (or abbreviation code)
2SK3798 2004-12-07 3 drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs gate-source voltage v gs (v) v ds ? v gs drain current i d (a) ? y fs ? ? i d drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) ( ? ) 5 4 3 2 1 0 0 4 16 24 36 v gs = 4.5 v common source tc = 25c pulse test 4.75 5 5.25 10 5.5 6 0.1 0.1 1 10 1 10 common source v ds = 20 v pulse test 25 100 tc = ? 55c 1 0.01 0.1 1 10 10 common source tc = 25c pulse test v gs = 10, 15 v forward transfer admittance ? y fs ? (s) drain current i d (a) drain current i d (a) 4 3 2 1 0 0 4 8 12 16 20 v gs = 4.5 v common source tc = 25c pulse test 4.75 5 5.25 5.5 6 10 24 0 0 2 4 6 8 2 8 common source v ds = 20 v pulse test tc = ? 55c 25 100 4 6 10 0 8 12 16 20 0 i d = 4 a 4 8 12 16 20 common source tc = 25 pulse test 1 2 4 5.75 5.75 8 12 20 32 28
2SK3798 2004-12-07 4 drain power dissipation p d (w) gate threshold voltage v th (v) case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) ( ? ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) v th ? tc case temperature tc (c) p d ? tc gate-source voltage v gs (v) total gate charge q g (nc) dynamic input / output characteristics drain-source voltage v ds (v) 1 0.1 10 100 1000 10000 1 3 5 10 30 50 100 common source v gs = 0 v f = 1 mhz tc = 25c c iss c oss c rss 60 40 0 0 40 80 120 160 20 0 0.1 common source tc = 25c pulse test ? 0.4 0.3 0.5 1 3 5 10 ? 0.8 ? 1.2 ? 1.6 v gs = 0, ? 1 v 10 3 160 ? 40 0 40 80 120 ? 80 10 common source v gs = 10 v pulse test 8 6 4 2 0 i d = 4 a 2 1 0 10 20 common source i d = 4 a tc = 25c pulse test v dd = 100 v v ds v gs 400 200 30 40 0 1 2 3 4 ? 80 ? 40 0 40 80 120 160 common source v ds = 10 v i d = 1 ma pulse test 5 1 500 200 0 100 300 400 20 8 0 4 12 16
2SK3798 2004-12-07 5 safe operating area channel temperature (initial) t ch (c) e as ? t ch avalanche energy e as (mj) r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) 0.01 1 1 10 0.1 100 10 100 1000 single nonrepetitive pulse tc=25 curves must be derated linearly with increase in temperature . i d max (pulsed) * i d max (continuous) * dc operation tc = 25c 100 s * 1 ms * ? 15 v 15 v test circuit wave form i ar b vdss v dd v ds r g = 25 ? v dd = 90 v, l = 39.6mh ? ? ? ? ? ? ? ? ? ? ? ? = v dd b vdss b vdss 2 i l 2 1 as drain current i d (a) drain-source voltage v ds (v) 400 300 200 100 0 25 50 75 100 125 150 0.01 10 0.1 1 10 100 1 10 100 1 10 t p dm t duty = t/t r th (ch-c) = 3.125c/w duty=0.5 0.2 0.1 single pulse 0.05 0.02 0.01 0.001
2SK3798 2004-12-07 6 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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